A student aims to deposit a thin metallic film on $\mathrm{SiO}_{2}$ substrate, with an adhesion layer between the metal film and substrate, in a contiguous planar fashion. Island type of growth must be avoided. The student performs an extensive optimization exercise. Which one of the following steps is in the right direction?
- Choose a metallic adhesion layer with very low interfacial energy with the deposited thin film.
- Choose a metallic adhesion layer with very low interfacial energy with $\mathrm{SiO}_{2}$, irrespective of its interaction with metal film to be deposited
- Increase the substrate temperature and decrease the deposition rate
- Use intermittent stages of deposition followed by annealing
